Scan Part Number

Align the crosshair center with the part number.

Tap the flash button if the warehouse is dark.

Recognizing Part Number...

2MBI200SB-120-50 Fuji Electric 1200V 200A Dual IGBT Module

2MBI200SB-120-50 IGBT Module In-stock / Fuji Electric: 1200V 200A, 2.6V Vce(sat). For industrial drives & UPS. 90-day warranty. Global fast shipping. Get quote.

· Categories: IGBT
· Manufacturer: Fuji
· Price: US$ 45 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 855
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on February 8, 2026

Engineering Analysis of the 2MBI200SB-120-50 IGBT Module

An Engineer's Look at the 2MBI200SB-120-50

Balancing Conduction and Switching Performance for Mid-Power Systems

The Fuji Electric 2MBI200SB-120-50 is a dual IGBT module designed to provide a robust and efficient power switching solution for a range of industrial applications. With core specifications of 1200V and 200A, it addresses the demanding requirements of systems where operational reliability and electrical efficiency are critical decision drivers. Key engineering benefits include a well-defined balance between conduction and switching losses and a thermally efficient package design. This module directly answers the engineer's question of how to achieve effective power conversion without compromising on thermal headroom in mid-power density designs. For high-frequency industrial drives requiring a solid foundation in loss management, this 1200V module presents a well-engineered option.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the 2MBI200SB-120-50 provide a clear picture of its capabilities. Each parameter is critical for accurate system modeling, thermal design, and reliability prediction. The values below are essential for engineers performing loss calculations and designing gate drive circuits.

Parameter Symbol Value Conditions
Collector-Emitter Voltage Vces 1200V Tj = 25°C
Continuous Collector Current Ic 200A Tc = 80°C
Collector-Emitter Saturation Voltage Vce(sat) 2.6V (typ) / 3.2V (max) Ic = 200A, Vge = 15V, Tj = 125°C
Turn-On Switching Loss Eon 38 mJ/pulse Vcc=600V, Ic=200A, Tj=125°C
Turn-Off Switching Loss Eoff 45 mJ/pulse Vcc=600V, Ic=200A, Tj=125°C
Thermal Resistance (Junction to Case) Rth(j-c) 0.083 °C/W (per IGBT)
Short-Circuit Withstand Time tsc ≥10µs Vge ≤ 15V, Vcc ≤ 800V, Tj ≤ 125°C
Maximum Junction Temperature Tjmax 150°C

Application Scenarios & Value

Achieving System-Level Benefits in High-Frequency Power Conversion

The 2MBI200SB-120-50 is engineered for robust performance in demanding industrial power conversion systems. Its 1200V blocking voltage provides the necessary design margin for applications running on 380V to 480V AC lines, making it an excellent choice for general-purpose Variable Frequency Drives (VFDs). In a typical VFD, the IGBTs are subjected to continuous high-frequency PWM switching. The module's specified turn-on (Eon) and turn-off (Eoff) energies are critical for calculating Switching Loss, which often dominates at higher frequencies. The relatively low total switching energy (Eon + Eoff) allows designers to push for higher PWM frequencies, which can reduce motor noise and decrease the size of magnetic components.

Consider its application in a 75kW industrial motor drive. Here, the module's 200A current rating provides ample capacity for nominal operation and tolerance for moderate overload conditions. The module's thermal resistance (Rth(j-c)) of 0.083 °C/W is a critical parameter; it dictates how efficiently heat can be transferred from the silicon chip to the heatsink. A lower Rth value simplifies Thermal Management, potentially allowing for a smaller, more cost-effective heatsink or enabling higher power density in the final inverter design. While this module is ideal for this power range, for systems requiring higher current handling, the related 2MBI300HH-120 offers a 300A capability within a similar voltage class.

Technical Deep Dive

A Closer Look at the VCE(sat) and Switching Loss Trade-off

One of the fundamental challenges in IGBT design is the inverse relationship between the collector-emitter saturation voltage (VCE(sat)) and switching speed. The 2MBI200SB-120-50, with its typical Vce(sat) of 2.6V at 200A and 125°C, represents a deliberate engineering compromise. This value directly determines conduction losses (Pcond = Vce(sat) * Ic * Duty Cycle). Think of Vce(sat) as the 'toll' paid in voltage every time current flows through the switch. A lower toll means less energy is wasted as heat during the 'on' state, which is crucial in applications with long duty cycles, such as in certain UPS systems or motor drives at low speed.

Conversely, the design choices that lower Vce(sat) can sometimes lead to higher switching losses (Eon and Eoff). These losses occur during the brief transitions between the on and off states. Imagine this as the energy cost of opening and closing a heavy gate; a faster, more abrupt action might require more effort. The performance curves in the device's datasheet allow an engineer to precisely quantify this trade-off. For the 2MBI200SB-120-50, the balance is struck to favor all-around performance in applications operating in the 5-15 kHz range, which is a common spectrum for industrial inverters. For a deeper understanding, an engineer should consult the IGBT datasheets to analyze these characteristics under their specific operating conditions.

Frequently Asked Questions

How does the Vce(sat) of 3.2V (max) impact thermal design at full load?

The maximum Vce(sat) of 3.2V is a worst-case value for calculating conduction losses. At 200A, this translates to 640W of instantaneous power dissipation per switch during the on-state. Engineers must use this maximum value, not the typical one, to ensure the heatsink and cooling system can maintain the junction temperature below the 150°C limit under all operating conditions.

What is the primary benefit of the module's 10µs short-circuit withstand time?

This rating ensures the IGBT can survive a direct short-circuit across the load terminals for at least 10 microseconds. This provides a critical window for the system's protection circuitry (part of the Gate Drive) to detect the fault and safely shut down the device, preventing catastrophic failure and enhancing overall system reliability.

Is this module suitable for applications with switching frequencies above 20kHz?

While possible, operating above 20kHz would significantly increase switching losses, leading to higher junction temperatures. The specified Eon and Eoff values suggest the module is optimized for moderate frequencies (5-15 kHz). For higher frequency operation, a thorough thermal analysis is mandatory, and it might be more efficient to select an IGBT specifically designed for lower switching losses, even if it has a slightly higher Vce(sat).

Strategic Application and Design

From a system design perspective, the 2MBI200SB-120-50 positions itself as a workhorse module for mainstream industrial power conversion. Its value lies not in pushing a single parameter to its extreme but in providing a predictable, reliable, and balanced performance profile. This allows engineering teams to minimize design risks and accelerate development cycles for core products like motor drives, uninterruptible power supplies (UPS), and solar inverters. The module's standard M235 package simplifies mechanical integration and sourcing of compatible hardware, such as bus bars and heatsinks, further solidifying its role as a practical choice for cost-sensitive and high-reliability industrial systems.

More from Fuji