Shunlongwei Co Ltd.

Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

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Small PLC   I/O points "256 points; single CPU, 8-bit or 16-bit processor, user memory capacity below 4K words; the main representative products are GE-I type from General Electric (GE) and TI100 from Texas Instruments F/F1/F2 of Mitsubishi Electric Corporation of Japan, C20/C40 of Tateishi Corporation (Omron) of Japan, S7-200 of Siemens of Germany, EX20/EX40 […]
IGBT basic application IGBT It is a device composed of a MOSFET (input stage) and a PNP transistor (output stage). It has the characteristics of small driving power and fast switching speed (control and response) of MOSFET devices, and bipolar device saturation. The voltage is reduced and the capacity is large (the power stage is […]
As one of the important high-power mainstream devices for power electronics, IGBT has been widely used in household appliances, transportation, power engineering, renewable energy and smart grid. In industrial applications such as traffic control, power conversion, industrial motors, uninterruptible power supplies, wind and solar equipment, and frequency converters for automatic control.   The IGBT module […]
Why does IGBT Module desaturation occur? This starts with the planar structure of the IGBT. IGBT and MOSFET have similar device structures. The drain D in the MOS is equivalent to the collector C of the IGBT, and the source S of the MOS is equivalent to the emitter E of the IGBT. Desaturation occurs […]
A liquid-crystal display (LCD) is a flat-panel display or other electronically modulated optical device that uses the light-modulating properties of liquid crystals. Liquid crystals do not emit light directly, instead using a backlight or reflector to produce images in color or monochrome.[1] LCDs are available to display arbitrary images (as in a general-purpose computer display(NL6448BC33-70)) […]
A diode is an electronic device made of semiconductor materials (silicon, selenium, germanium, etc.). It has unidirectional conductivity, that is, when a forward voltage is applied to the anode and cathode of the diode, the diode is turned on. When a reverse voltage is applied to the anode and cathode, the diode is turned off. […]
IGBT module inverter circuit design for solar photovoltaic power generation (1) Solar photovoltaic power generation harnesses sunlight to convert solar energy into electrical energy using solar arrays, specifically PV module squares. The generated direct current (DC) is then transformed into alternating current (AC) through an inverter for user consumption. Traditionally, photovoltaic power generation systems employed […]
  In the EMC design process, capacitors are the most widely used devices, mainly used to form various low-pass filters or as decoupling capacitors and bypass capacitors. Through practical data: In EMC design, proper selection and use of capacitors can not only solve many EMC problems, but also fully reflect the advantages of better results […]
First of all, it should be explained that SiC can also be used as an IGBT Module. There is a problem with the Mosfet of Si material, that is, the chip will become thicker if the voltage withstand capability is high, and the conduction loss is also very high. Therefore, the Mosfet of silicon material […]
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS),[1] is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change […]