Content last revised on March 25, 2024
Description:
Powerex IGBTMOD™ Modulesare designed for use in switchingapplications. Each module consistsof six IGBT Transistors in a threephase bridge configuration, witheach transistor having a reverse-connected super-fast recoveryfree-wheel diode. All componentsand interconnects are isolatedfrom the heat sinking baseplate,offering simplified system assemblyand thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
Baseplate for Easy Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplie
- Junction Temperature (Tj): -40 to 150°C
- Storage Temperature (Tstg): -40 to 125°C
- Collector-Emitter Voltage (G-E SHORT) (VCES): 1200 Volts
- Gate-Emitter Voltage (C-E SHORT) (VGES): ±20 Volts
- Collector Current (Tc = 25°C) (IC): 75 Amperes
- Peak Collector Current (Tj ≤ 150°C) (ICM): 150* Amperes
- Emitter Current (Tc = 25°C) (IE): 75 Amperes
- Peak Emitter Current (IEM): 150* Amperes
- Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) (Pc): 357 Watts
- Mounting Torque, M5 Mounting: 3.1 in-lb
- Weight: 300 Grams
- Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) (Viso): 2500 Volts
