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CM75TJA-24FA Mitsubishi 1200V 75A Six-Pack IGBT Module

  • CM75TJA-24FA
  • CM75TJA-24FA IGBT Module In-stock / Mitsubishi: 1200V 75A six-pack. Low VCE(sat) power stage. 90-day warranty, AC motor drives. Global shipping. Get quote.

    · Categories: IGBT
    · Manufacturer: Mitsubishi
    · Price: US$ 135 In-Stock Offer
    · Date Code: Please Verify on Quote
    . Available Qty: 285
    90-Day Warranty
    Global Shipping
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on August 20, 2026

    CM75TJA-24FA Six-Pack IGBT Module for Industrial Inverters

    How do design engineers achieve high power density in three-phase motor drives without expanding enclosure dimensions? The CM75TJA-24FA from Mitsubishi Electric provides a compact six-pack architecture that integrates a complete three-phase inverter bridge into a single isolated package. Top specs: 1200V VCES | 75A IC | 0.35 °C/W Rth(j-c) per IGBT. Key benefits: Low conduction losses; simplified assembly footprint. For compact 400V AC drives requiring proven thermal ruggedness, this 1200V module provides an optimal balance between switching efficiency and package footprint.

    What is the primary benefit of the six-pack topology in the CM75TJA-24FA? It replaces six discrete switches with a unified three-phase bridge, minimizing busbar complexity and parasitic loop inductance.

    Frequently Asked Questions

    Addressing Core Integration and Electrical Constraints

    How does the 1200V VCES rating benefit 400V/480V AC line drive designs?
    A 1200V collector-emitter rating delivers necessary voltage headroom against DC bus overvoltage transients and inductive kickback during hard switching on standard 400V to 480V three-phase utility grids.

    What gate drive voltage and resistance parameters are recommended for optimal switching?
    The module operates standardly at VGE = +15V for full turn-on saturation. Incorporating an appropriate external gate resistor ensures balanced dV/dt and di/dt transitions, mitigating voltage overshoots during inductive load switching.

    How does the junction-to-case thermal resistance affect heatsink sizing?
    With an Rth(j-c) of 0.35 °C/W per IGBT switch, thermal energy is conducted efficiently to the baseplate. Think of the copper baseplate as a high-capacity thermal highway, preventing localized heat pooling under heavy motor load cycles.

    Key Parameter Overview

    Essential Electrical and Thermal Ratings

    Functional Group Parameter Symbol Rated Value / Condition Unit
    Absolute Maximum Ratings Collector-Emitter Voltage VCES 1200 V
    Continuous DC Collector Current IC 75 (TC = 25°C) A
    Peak Collector Current ICM 150 (Tj ≤ 150°C) A
    Isolation Voltage Viso 2500 (AC 1 min) Vrms
    Electrical Characteristics Collector-Emitter Saturation Voltage VCE(sat) 1.8 (typ) / 2.4 (max) @ 75A V
    Gate-Emitter Threshold Voltage VGE(th) 6.0 (typ, range 5–7) V
    Diode Forward Voltage VEC 2.3 (typ) / 3.2 (max) @ 75A V
    Thermal Characteristics Thermal Resistance (IGBT Part) Rth(j-c) 0.35 (per 1/6 module) °C/W
    Thermal Resistance (FWD Part) Rth(j-c) 0.47 (per 1/6 module) °C/W

    Download the CM75TJA-24FA datasheet for detailed specifications and performance curves.

    How does the low typical VCE(sat) of 1.8V reduce system operating cost? It decreases steady-state conduction dissipation directly, lowering heat dissipation demands during continuous motor operation.

    Technical Deep Dive

    Silicon Structure and Packaging Architecture

    The CM75TJA-24FA incorporates advanced trench gate cell geometry combined with discrete super-fast recovery free-wheel diodes (FWD). By optimizing carrier concentration in the drift region, the trench architecture suppresses forward conduction drop without compromising turn-off speed. To learn more about internal chip topologies, explore our guide to IGBT module fundamentals.

    Inside the module, the internal DC busbars act like a symmetrical electrical reservoir. Balanced layout routing ensures equalized parasitic inductance across all three half-bridge legs, preventing voltage spike imbalance during high-speed commutations. For advanced gate matching methods, refer to our analysis on 1200V industrial inverter switching.

    The electrically isolated copper baseplate simplifies assembly by mounting directly to common heatsinks. Effective cooling preserves device longevity under demanding industrial duty cycles, as detailed in our guide on IGBT thermal management and heatsink design.

    Application Scenarios & Value

    Optimizing Power Stages in Dynamic Motor Drives

    In three-phase Variable Frequency Drive (VFD) designs and industrial servo systems, rapid speed reversals subject semiconductor switches to heavy cyclic thermal swings. In a conveyor drive switching at 8 kHz to 15 kHz, the fast reverse recovery diode suppresses turn-on current spikes, preventing excessive switching losses.

    The device ensures safe operation within its specified Safe Operating Area during short-circuit fault clearing. In applications such as uninterruptible power supplies (UPS) and battery-powered inverter systems, the unified 6-pack module replaces bulky separate assemblies to conserve PCB space.

    For systems with higher current requirements in the same voltage class, the related CM100TJ-24F provides a 100A rating, while the CM150TL-24NF offers 150A capability. Conversely, for lower power requirements, the CM50DY-24H serves dual-switch configurations.

    Submit your component list and bill of materials to our technical support desk today to verify specifications, lead times, and dispatch schedules.

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