Infineon FZ800R12KL4C IGBT Module

FZ800R12KL4C: High-Reliability 1200V, 800A IGBT Module for Demanding Power Conversion

The Infineon FZ800R12KL4C is a high-power single IGBT module engineered for robust performance and exceptional reliability in the most demanding power conversion applications. Integrating Infineon's proven TRENCHSTOP™ IGBT4 technology, this module provides a finely tuned balance of low conduction and switching losses, offering engineers a powerful and efficient solution for designing high-current inverters and converters. With a 1200V blocking voltage and a nominal current rating of 800A, it is a cornerstone component for systems where power density and operational longevity are non-negotiable.

Engineered for Optimal Performance and Reliability

At the core of the FZ800R12KL4C is the sophisticated TRENCHSTOP™ IGBT4 chip. This technology is specifically designed to minimize the collector-emitter saturation voltage (VCE(sat)) while maintaining excellent switching characteristics. For system designers, this translates directly into lower thermal dissipation under load, which simplifies heatsink requirements and allows for a more compact overall system design. The module's low inductance layout further enhances its performance by minimizing voltage overshoot during high-speed switching events, a critical factor for protecting the silicon and improving system-level EMI performance.

Key engineering advantages include:

• Optimized Loss Profile: The IGBT4 technology provides a superior trade-off between on-state voltage and switching energy, making the FZ800R12KL4C highly efficient in applications operating at moderate switching frequencies, such as industrial motor drives.
• High Thermal Headroom: A maximum operating junction temperature (Tvj op) of 150°C provides a substantial thermal margin, ensuring reliable operation under heavy load and overload conditions.
• Robust Mechanical Design: Housed in the industry-standard IHM-B package, this module is built for mechanical stability and straightforward integration into larger power assemblies. Its construction ensures excellent thermal contact and long-term durability.

Application Spotlight: Central Solar Inverters

Consider the deployment of the FZ800R12KL4C in a utility-scale central solar inverter. In this scenario, multiple high-current modules are paralleled to handle megawatt-level power conversion. The FZ800R12KL4C's low VCE(sat) of typically 2.10V at 25°C significantly reduces conduction losses, which are dominant in solar applications due to the continuous nature of the DC input. This reduction in wasted heat directly increases the inverter's energy harvesting efficiency, maximizing the financial return of the solar plant. Furthermore, its proven reliability is essential for ensuring the long service life expected in renewable energy infrastructure. For systems requiring even greater current handling, the FZ1200R12KF5 offers a seamless upgrade path to 1200A within a similar technological framework.

Interpreting Key Parameters for Your Design

Understanding the datasheet is crucial for successful implementation. For the FZ800R12KL4C, two parameters warrant special attention. First, the Repetitive Peak Collector Current (ICRM) is rated at 1600A, which is twice the nominal current. This highlights the module's capability to withstand significant current pulses for short durations, a critical feature for handling motor start-up inrush currents or grid fault conditions without failure. Second, the low internal gate resistance (RGint) of 1.3 Ω ensures rapid and efficient control of the IGBT gate, contributing to its controlled switching behavior. Effective gate drive design is paramount, a topic further explored in our guide on robust IGBT gate drive design.

Key Specifications of the FZ800R12KL4C

[Download the FZ800R12KL4C Datasheet]

Frequently Asked Technical Questions

What are the primary applications for the FZ800R12KL4C?
This module is ideally suited for high-power industrial applications, including variable frequency drives (VFDs), central solar inverters, large-scale uninterruptible power supplies (UPS), and industrial welding systems. Its 800A rating makes it a strong choice for systems in the several hundred kilowatt to megawatt range.

Can the FZ800R12KL4C be paralleled for higher current output?
Yes, these modules are designed for parallel operation. The positive temperature coefficient of VCE(sat), a characteristic feature of TRENCHSTOP™ IGBTs, helps ensure proper current sharing among paralleled modules. However, careful attention must be paid to symmetrical busbar design and gate drive layout to prevent current imbalances, a common cause of premature failure. For more insights, refer to our article on IGBT failure analysis.

What is a key consideration for the thermal design when using this module?
With a maximum power dissipation of 5.7 kW, effective thermal management is critical. The thermal resistance from junction to case (RthJC) is specified at 22.0 K/kW. A high-performance heatsink combined with a quality thermal interface material (TIM) is essential to keep the junction temperature well below the 150°C maximum during operation, ensuring both performance and long-term reliability.

For engineers developing high-power conversion systems that demand a blend of efficiency, robustness, and proven technology, the Infineon FZ800R12KL4C provides a well-engineered and reliable solution.