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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

6MBI150FB-060

6MBI150FB-060

6MBI150FB-060 150A/600V/IGBT/6U; 6MBI150FB-060
FF600R07ME4_B11

FF600R07ME4_B11

FF600R07ME4_B11 IGBT Module In-stock / Infineon: 650V 600A. PressFIT assembly, motor drives. 90-day warranty. Check stock online.
7MBI75N-060

7MBI75N-060

7MBI75N-060 IGBT Module In-stock / Fuji Electric: 600V 75A. Low VCE(sat), high-speed switching. 90-day warranty, AC motor control. Global fast shipping. Get quote.
MG30G1BL2

MG30G1BL2

MG30G1BL2 Toshiba HIGH POWER SWITCHING APPLICATIONS.MOTOR CONTROL APPLICATIONS. 30A 450V
QM150DY-H

QM150DY-H

QM150DY-H Mitsubishi 600V 150A Dual IGBT Module: Robust, dual-packaged power switch for inverters and industrial drives. Reliable performance. In-stock.
F4-150R06KL4

F4-150R06KL4

F4-150R06KL4 IGBT Module In-stock / Infineon: 600V 150A. High efficiency for motor drive applications. 90-day warranty, fast global shipping. Request pricing now.
IXGP28N120B

IXGP28N120B

IXGP28N120B Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN; IXGP28N120B
89CNQ150A

89CNQ150A

89CNQ150A DIODE 40 A, 150 V, SILICON, RECTIFIER DIODE, PLASTIC, D61-8, 3 PIN, Rectifier Diode; 89CNQ150A
APTGT100A170TG

APTGT100A170TG

APTGT100A170TG Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN; APTGT100A170TG
S8016RTP

S8016RTP

S8016RTP Silicon Controlled Rectifier, 16A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220R, 3 PIN; S8016RTP