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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

DDTC143EUA-7

DDTC143EUA-7

DDTC143EUA-7 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3; DDTC143EUA-7
VI-JWD-EZ

VI-JWD-EZ

VI-JWD-EZ DC-DC Regulated Power Supply Module, 1 Output, 25W, Hybrid,; VI-JWD-EZ
VI-JNX-CZ

VI-JNX-CZ

VI-JNX-CZ VICOR DC-DC Regulated Power Supply Module, 1 Output, 25W, 5A Hybrid
BCW31T116

BCW31T116

BCW31T116 Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon; BCW31T116
DSEI2X101-12A

DSEI2X101-12A

DSEI2X101-12A Rectifier Diode, 1 Phase, 2 Element, 91A, 1200V V(RRM), Silicon, MINIBLOC-4; DSEI2X101-12A
IXGP30N60C3C1

IXGP30N60C3C1

IXGP30N60C3C1 Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, PLASTIC, TO-220, 3 PIN; IXGP30N60C3C1
NYC008-6JG

NYC008-6JG

NYC008-6JG Sensitive Gate Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 5000-BLKBX; NYC008-6JG
VI-20D-IY

VI-20D-IY

VI-20D-IY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-20D-IY
APTGF300DA120D3G

APTGF300DA120D3G

APTGF300DA120D3G Insulated Gate Bipolar Transistor, 420A I(C), 1200V V(BR)CES, ROHS COMPLIANT, D3, 11 PIN; APTGF300DA120D3G
MA4P7002F-1072T

MA4P7002F-1072T

MA4P7002F-1072T Pin Diode, 200V V(BR), Silicon, ROHS COMPLIANT, CERAMIC, CASE 1072, 2 PIN; MA4P7002F-1072T