#Infineon, #FD400R12KE3, #IGBT_Module, #IGBT, FD400R12KE3 Infineon Insulated Gate Bipolar Transistor 400A I(C) 1200V V(BR)CES
Feature
• High Short Circuit Capability, Self Limiting Short Circuit Current
• Low Switching Losses
Mechanical Features
• Isolated Base Plate
• Copper Base Plate
• PressFIT Contact Technology
• RoHS compliant
• Standard Housing
Typical Applications
• Inductive Heating and Welding
• UPS Systems
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
• Collector-Emitter voltage Vces:1200V
• Gate-Emitter voltage VGES:±20V
• Collector current Ic Continuous Tc=25°C :400A
• Collector current Icp 1ms Tc=25°C :800A
• Collector power dissipation Pc:2000W
• Operating junction temperature Tj:+150°C
• Storage temperature Tstg :-40 to +125°C