IGBT Modules - Transistors from Mitsubishi & Fuji - Page 154

V300A24T500AL

V300A24T500AL Power Supply Module,; V300A24T500AL

VICOR Qty: 220pcs

80CNQ035ASM

80CNQ035ASM Rectifier Diode, Schottky, 1 Phase, 2 Element, 35V V(RRM), Silicon, PLASTIC, CASE D-61-8-SM, 3 PIN; 80CNQ035ASM

Vishay Semiconductor Diodes Division Qty: 1461pcs

2MBI450U4N-170-50

2MBI450U4N-170-50 IGBT Module In-stock / Fuji Electric: 1700V 450A. U4 Series for high-voltage inverters. 90-day warranty. Request pricing now.

Fuji Electric Qty: 153pcs Price: US$51

ESAG32-06T

ESAG32-06T Trigger Device,; ESAG32-06T

FUJI Qty: -6pcs

PM50CLA060

PM50CLA060 Mitsubishi Electric IPM for compact industrial inverters and CNC spindle drives, rated 600V and 50A for equipment repair.

Mitsubishi Qty: -22pcs

MWI225-12E9

MWI225-12E9 Insulated Gate Bipolar Transistor, 355A I(C), 1200V V(BR)CES, N-Channel, MODULE-29; MWI225-12E9

IXYS Qty: 167pcs

EPC2018

EPC2018 Power Field-Effect Transistor, 12A I(D), 150V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7; EPC2018

EPC Qty: 9115pcs

DDTA143FUA-7-F

DDTA143FUA-7-F Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-3; DDTA143FUA-7-F

Diodes Inc Qty: 193pcs

IXYH50N120C3D1

IXYH50N120C3D1 Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN; IXYH50N120C3D1

IXYS Qty: 2057pcs

VI-232-CY

VI-232-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-232-CY

VICOR Qty: 72pcs