Product Tag:
1mbi
1MBI600NN-060 600A/600V/IGBT/1U;
Fuji Electric's 1MBI2400VD-170E (1700V/2400A) uses V-Series tech for ultra-low Vce(sat), maximizing efficiency and reducing thermal load in high-power megawatt inverters.
Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M122, 4 PIN
IGBT MODULE ( N series ) 1-Pack IGBT 300A/1200V
Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A
1MBI600U4B-120 Insulated Gate Bipolar Transistor 800A I(C) 1200V V(BR)CES N-Channel MODULE-4; 1MBI600U4B-120
1MBI600PX-140 Insulated Gate Bipolar Transistor 800A I(C) 1400V V(BR)CES N-Channel M138 4 PIN; 1MBI600PX-140
Fuji 1MBI600LP-060A: A robust 600V/600A IGBT featuring low Vce(sat) for minimal conduction loss and proven reliability in demanding industrial power systems.
Fuji Electric 1MBI600VF-120-50: A robust 1200V/600A V-Series IGBT engineered for superior efficiency and reliability via ultra-low switching losses.
1MBI200SA-120B IGBT: 200A 1200V
