BYD Semiconductor will release a new generation of high-performance IGBTs

In 2018, BYD semiconductor released the IGBT4.0 chip in Ningbo, setting a benchmark for domestic vehicle-level mid-to-high-end IGBT chips.

After two years of accumulation and precipitation, BYD semiconductor will soon release a higher performance IGBT6.0 at the new R&D center in Xi’an. The Xi’an High-tech Zone has gathered a large number of well-known companies such as Huawei, Inspur, and Samsung. With the completion of the Xi’an R&D Center building, it also marks the official entry of BYD Semiconductor into China’s “Western Silicon Valley”.

In 2008, BYD acquired Ningbo Zhongwei for 170 million yuan. The most valuable thing on Zhongwei’s book is an 8-inch wafer line that was eliminated by TSMC, but this acquisition has also brought BYD resources such as wafer workshops and technical teams. At that time, the Yangtze River Delta region was an important base for China’s semiconductor manufacturing. At that time, these resources were very scarce in mainland China.

But this is not the first time that BYD has entered the semiconductor industry. BYD Microelectronics has been engaged in integrated Circuit design as early as 2002, and has developed many products covering power management chips, CMOS image sensors, LCD drivers and touch control chips.

In 2018, IGBT4.0 chip, larger current passing capacity, lower energy consumption, longer high temperature life, these are the new generation of Tang can achieve 4.5S per 100 km acceleration time, and the power consumption per 100 km is only 17.9kwh Protection.

In 2019, thanks to the installation of SiC chips with lower energy consumption and higher thermal conductivity, BYD Han’s peak torque reached 350N.M, and the peak power reached 200KW, which has achieved Han’s outstanding product strength.

The IGBT6.0 to be released this time will have higher reliability than similar products and a major breakthrough in product performance. The upcoming listing on the ChiNext will also help BYD Semiconductor’s rapid development.