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IGBT

High-power IGBT Modules (Half Bridge, Full Bridge, Sixpack) for inverters, traction, and renewables. Find high-efficiency solutions from Infineon, Fuji, and Mitsubishi.

VI-J7M-CY

VI-J7M-CY

VI-J7M-CY DC-DC Regulated Power Supply Module, 1 Output, 50W, Hybrid,; VI-J7M-CY
MG50N2CK1

MG50N2CK1

MG50N2CK1 TRANSISTOR 50 A, 900 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-68B1A, 5 PIN, BIP General Purpose Power; MG50N2CK1
PE250GB40

PE250GB40

PE250GB40 Silicon Controlled Rectifier, 250000mA I(T), 400V V(RRM); PE250GB40
VI-B1V-IV

VI-B1V-IV

VI-B1V-IV VICOR DC-DC Booster Module, 150W 30A
170M3566

170M3566

170M3566 Electric Fuse, 250A, 700VAC, 200000A (IR), Inline/holder,; 170M3566
VI-23F-CV

VI-23F-CV

VI-23F-CV DC-DC Regulated Power Supply Module, 1 Output, 150W, Hybrid,; VI-23F-CV
FF1200R17KE3_B2

FF1200R17KE3_B2

FF1200R17KE3_B2 Infineon Technical information IGBT module 1200A/1700V/IGBT/2U
BSM200GAR120DN2

BSM200GAR120DN2

BSM200GAR120DN2 Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; BSM200GAR120DN2
NYC008-6JRLREG

NYC008-6JRLREG

NYC008-6JRLREG Sensitive Gate Silicon Controlled Rectifier - SCR, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL; NYC008-6JRLREG
CM100RX-24S

CM100RX-24S

CM100RX-24S Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SEVENPACK-22; CM100RX-24S